Ultrasound influence on I-V-T characteristics of silicon Schottky barrier structure

摘要

The influence of ultrasonic loading on current-voltage characteristics has been investigated in Mo-n~+-Si structures in the temperature range from 130 to 330 K. The longitudinal ultrasonic waves were of 8.4 MHz in frequency and had the intensity approaching 0.3 W/cm~2. The acoustically induced reversible modification of the ideality factor and the Schottky barrier height was observed. The temperature dependence of the ultrasound effect was found to be non-monotonic and the parameters variation decreased with the temperature increase from 200 to 330 K. The obtained results have been analyzed on account of the inhomogeneous Schottky barrier model. The ultrasonic loading has been shown to increase the effective density of patches, the barrier height of the uniform region and the patches region and to broaden the patch parameter distribution.