机译:纳米YBCO-金属触点中的电阻开关效应的反极性和强烈的不均匀性
Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava, Slovak Republic;
Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava, Slovak Republic;
Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine;
Institute for Metal Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine;
Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava, Slovak Republic;
Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava, Slovak Republic;
Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava, Slovak Republic;
机译:SrTiO3上自组装Pt纳米点上的纳米级电阻开关肖特基接触
机译:安装在小型继电器上的钯开关触点上的电弧转移方向-切换Dc 42 V和4〜10A的电阻电路时
机译:在钯开关触点上安装在小继电器上的电弧转移方向 - 在切换DC 42 V和4〜10A的电阻电路的情况下
机译:基于复杂过渡金属氧化物的纳米级触点电阻切换的物理机制
机译:理解金属/半导体肖特基接触的电性能:块体和纳米级结构中势垒不均匀性和几何形状的影响。
机译:使用纳米级(1.3 nm)核-壳IrOx纳米点的依赖于形成极性的改进的电阻开关存储特性
机译:使用纳米级(1.3 nm)核-壳IrOx纳米点的依赖于形成极性的改进的电阻开关存储特性