机译:金属有机气相外延生长的GaNA中深层缺陷的起源和退火
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology,Janiszewskiego 11/17,50-372 Wroclaw, Poland;
Faculty of Fundamental Problems of Technology, Wroclaw University of Technology,Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology,Janiszewskiego 11/17,50-372 Wroclaw, Poland;
Faculty of Fundamental Problems of Technology, Wroclaw University of Technology,Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;
机译:在金属有机气相外延生长的(In_xAl_(1-x))N层中存在的V缺陷的性质和起源是InN含量,层厚度和生长参数的函数
机译:金属有机气相外延生长的GaNAs合金成分波动的观察
机译:缓和梯度InGaP在金属有机气相外延中的微结构缺陷:分支缺陷的起源和工程
机译:富含含量的富含金属血管阶段外延的内容
机译:金属有机气相外延生长的薄膜InMnSb多相半导体合金的相稳定性和铁磁性
机译:通过氢化物气相外延减少在纳米级蓝宝石衬底上生长的AlGaN中的缺陷
机译:通过金属有机气相外延生长在蓝宝石衬底上的双相高品质单晶NiO