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Temperature dependence of hydrogenated amorphous silicon solar cell performances

机译:氢化非晶硅太阳能电池性能的温度依赖性

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摘要

Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energy yield, we measured the temperature and irradiance dependence of the maximum power output (P_(mpp)), the fill factor (FF), the short-circuit current density (J_(sc)), and the open-circuit voltage (V_(oc)) for four series of cells fabricated with different deposition conditions. The parameters varied during plasma-enhanced chemical vapor deposition (PE-CVD) were the power and frequency of the PE-CVD generator, the hydrogen-to-silane dilution during deposition of the intrinsic absorber layer (i-layer), and the thicknesses of the a-Si:H i-layer and p-type hydrogenated amorphous silicon carbide layer. The results show that the temperature coefficient of the V_(oc) generally varies linearly with the V_(oc) value. The J_(sc) increases linearly with temperature mainly due to temperature-induced bandgap reduction and reduced recombination. The FF temperature dependence is not linear and reaches a maximum at temperatures between 15 ℃ and 80 ℃. Numerical simulations show that this behavior is due to a more positive space-charge induced by the photogenerated holes in the p-layer and to a recombination decrease with temperature. Due to the FF(T) behavior, the P_(mpp) (T) curves also have a maximum, but at a lower temperature. Moreover, for most series, the cells with the highest power output at STC also have the best energy yield. However, the P_(mpp) (T) curves of two cells with different i-layer thicknesses cross each other in the operating cell temperature range, indicating that the cell with the highest power output could, for instance, have a lower energy yield than the other cell. A simple energy-yield simulation for the light-soaked and annealed states shows that for Neuchatel (Switzerland) the best cell at STC also has the best energy yield. However, for a different climate or cell configuration, this may not be true.
机译:薄膜氢化非晶硅太阳能(a-Si:H)电池的温度系数比晶体硅电池更好。为了研究针对标准条件(STC)优化的a-Si:H电池是否也具有最高的能量产量,我们测量了最大功率输出(P_(mpp))和填充系数(FF)的温度和辐照度依赖性,短路电流密度(J_(sc))和开路电压(V_(oc)),用于四个具有不同沉积条件的电池组。在等离子体增强化学气相沉积(PE-CVD)过程中变化的参数是PE-CVD发生器的功率和频率,本征吸收剂层(i层)沉积过程中氢到硅烷的稀释度以及厚度a-Si:H i层和p型氢化非晶碳化硅层的结构。结果表明,V_(oc)的温度系数通常随V_(oc)值线性变化。 J_(sc)随温度线性增加,这主要是由于温度引起的带隙减少和重组减少。 FF温度依赖性不是线性的,并且在15℃至80℃之间达到最大值。数值模拟表明,这种行为是由于p层中的光生空穴引起了更正的空间电荷,并且是由于温度的降低导致了复合的减少。由于FF(T)行为,P_(mpp)(T)曲线也具有最大值,但温度较低。此外,对于大多数系列而言,STC上具有最高功率输出的电池也具有最佳的能量产出。但是,具有不同i层厚度的两个电池的P_(mpp)(T)曲线在工作电池温度范围内相互交叉,这表明,例如,具有最高功率输出的电池的能量产出可能低于另一个单元格。对浸透和退火的状态进行的简单能量屈服模拟表明,对于纳沙泰尔(瑞士),STC处的最佳电池也具有最佳的能量屈服。但是,对于不同的气候或电池配置,可能并非如此。

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  • 来源
    《Journal of Applied Physics》 |2016年第4期|044505.1-044505.10|共10页
  • 作者单位

    Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladiere 71, CH-2000 Neuchatel, Switzerland;

    Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladiere 71, CH-2000 Neuchatel, Switzerland,Defect Lab, Ira A. Fulton Schools of Engineering, School of Electrical, Computer and Energy Engineering (ECEE), Arizona State University, 551 E. Tylor Mall, Tempe, Arizona 85287, USA;

    Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladiere 71, CH-2000 Neuchatel, Switzerland;

    Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladiere 71, CH-2000 Neuchatel, Switzerland;

    Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladiere 71, CH-2000 Neuchatel, Switzerland;

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