ReS_2-based interlayer tunnel field effect transistor

摘要

In this study, we report the fabrication and characterization of a vertical resonant interlayer tunneling field-effect transistor created using exfoliated, few-layer rhenium disulfide (ReS_2) flakes as the electrodes and hexagonal boron nitride as the tunnel barrier. Due to the Γ-point conduction band minimum, the ReS_2 based system offers the possibility of resonant interlayer tunneling and associated low-voltage negative differential resistance (NDR) without rotational alignment of the electrode crystal orientations. Substantial NDR is observed, which appears consistent with in-plane crystal momentum conserving tunneling, although considerably broadened by scattering consistent within low mobility ReS_2 flakes.