机译:通过原位相移电子全息术精确测量偏置的GaAs p-n隧道结两端的电势,场和电荷密度分布
Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan;
Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan;
Advanced Technologies R&D Laboratories, Furukawa Electric Co. Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan,Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656,Japan;
Advanced Technologies R&D Laboratories, Furukawa Electric Co. Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Advanced Technologies R&D Laboratories, Furukawa Electric Co. Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Advanced Technologies R&D Laboratories, Furukawa Electric Co. Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan;
机译:通过相移电子全息术,精确测量偏置的GaAs化合物半导体中的电位
机译:利用离轴电子全息术对InGaAs / AIGaAs发光二极管中的p-n结进行定量掺杂分析
机译:利用p-n结电场研究AIGaAs / GaAs半导体异质结构的隧道耦合量子约束有源区中的折射率调制
机译:电子全息图逆偏置P-N结的电气活性电荷密度掺量的测定和解释
机译:在椭圆偏振偏振场中精确测量电子隧穿电离的初始条件
机译:通过扫描透射电子显微镜对p-n结处的内置电场进行成像
机译:通过反向偏置Si P-N结的检查直接比较差分相位对比度和偏离轴电子全全息术进行电位测量电位。和III-V样品
机译:利用静电势,电场和与电荷密度分布相关的其他性质对分子反应性和合成途径设计的解释和预测