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The Determination and Interpretation of Electrically Active Charge DensityProfiles at Reverse Biased p-n Junctions from Electron Holograms

机译：电子全息图逆偏置P-N结的电气活性电荷密度掺量的测定和解释

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《Microscopy Society of America annual meeting》|2002年||共2页
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R.E. Dunin-Borkowski; A.C. Twitchett; P.A. Midgley;
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中图分类观察、分析晶体结构的实验方法;
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专利

1. A model for the interpretation of holographic and Lorentz images of tilted reverse-biased p-n junctions in a finite specimen [J] . Beleggia M., Pozzi G., Capelli R. Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties . 2000,第5期

机译：有限样本中倾斜的反向偏置p-n结的全息和Lorentz图像解释模型
2. On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device [J] . Xu Kaikai, Liu Haitao, Yu Qi, Journal of optoelectronics and advanced materials . 2015,第11a12期

机译：关于嵌入金属氧化物半导体场效应晶体管器件中的反向偏置硅p-n结的电学和光学特性
3. Effects of beam-specimen interaction on the observation of reverse-biased p-n junctions by electron interferometry [J] . P. F. Fazzini, P. G. Merli, G. Pozzi, Physical review. B, Condensed Matter And Materials Physics . 2005,第8期

机译：束-标本相互作用对电子干涉法观察反向偏置p-n结的影响
4. The Determination and Interpretation of Electrically Active Charge DensityProfiles at Reverse Biased p-n Junctions from Electron Holograms [C] . R.E. Dunin-Borkowski, A.C. Twitchett, P.A. Midgley Microscopy Society of America annual meeting . 2002

机译：电子全息图逆偏置P-N结的电气活性电荷密度掺量的测定和解释
5. Space-Charge Layer Width and Junction Capacitance of a Hyper-Abrupt p-n Junction [D] . NUKUSHINA Hideo, 温品秀雄 -1

机译：超突变p-n结的空间电荷层宽度和结电容
6. p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation [O] . Constantine T. Dervos, Panayotis D. Skafidas, John A. Mergos, 2004

机译：光和电激发下的p-n结光电流建模评估
7. Direct comparison of differential phase contrast and off-axis electron holography for the measurement of electric potentials by the examination of reverse biased Si p-n junctions and III-V samples [O] . Benedikt Haas, David Cooper, Jean-Luc Rouviere 2016

机译：通过反向偏置Si P-N结的检查直接比较差分相位对比度和偏离轴电子全全息术进行电位测量电位。和III-V样品
8. Development of Reverse Biased p-n Junction Electron Emission [R] . Fowler, P., Muly, E. C. 1971

机译：反向偏压p-n结电子发射的研究进展

The Determination and Interpretation of Electrically Active Charge DensityProfiles at Reverse Biased p-n Junctions from Electron Holograms

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