机译:纳米硅基自旋阀器件中的逆自旋阀效应
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan,Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033, Japan,Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
机译:纳米级硅基自旋阀装置中的自旋传输
机译:全金属介观自旋阀装置中的各向异性磁阻和自旋阀效应
机译:反向局部磁阻效应在铁磁 - 半导体横向旋转阀装置中高达室温
机译:纳米级硅基自旋阀装置中的逆自旋阀效应
机译:交换偏置和封闭通量伪自旋阀材料,设备应用和电气可靠性。
机译:纳米级厚铁扩散阻挡层使具有顶部Co2Fe6B2自由层的双MgO基p-MTJ自旋阀具有更高的TMR比和Δ。
机译:将原始碳纳米管叉形冲压到自旋阀装置的铁磁触点上