机译:超晶格应力消除层中InGaN与GaN的厚度比对在Si衬底上生长的InGaN基绿色LED的光电性能的影响
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
National Institute of LED on Si Substrate, Nanchang University, Nanchang, China;
机译:InGaN厚度与GaN在超晶格应变消除层中的厚度比对Si基材生长的InGaN的绿色LED光电性能
机译:两步生长的InGaN / GaN超晶格的界面改性为硅衬底上的基于InGaN的绿色LED制备层
机译:Al_(0.06)Ga_(0.94)N / GaN应变层超晶格覆层对AlN / GaN中间层的Si(111)衬底上生长的InGaN基多量子阱的影响
机译:AlGaN / GaN紧张层超晶格底层通过MOCVD在Si(111)衬底上生长的基于InGaN的多量子孔
机译:利用纳米技术在Si上生长,制造和表征基于InGaN / GaN的蓝色,绿色和黄色LED。
机译:应变松弛对在具有溅射AlN成核层的4英寸蓝宝石衬底上生长的InGaN / GaN绿色LED的性能的影响
机译:基于633-nm的ingan基红色LED在厚的下面的GaN层上生长,具有降低的面内残余应力