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Influence of H_2 and D_2 plasmas on the work function of caesiated materials

机译:H_2和D_2等离子体对钙质材料功函数的影响

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Caesium-covered surfaces are used in negative hydrogen ion sources as a low work function converter for H~-/D~- surface production. The work function χ of the converter surface is one of the key parameters determining the performance of the ion source. Under idealized conditions, pure bulk Cs has 2.14 eV. However, residual gases at ion source background pressures of 10~(-7)-10~(-6) mbar and the plasma surface interaction with the hydrogen discharge in front of the caesiated surface dynamically affect the actual surface work function. Necessary fundamental investigations on the resulting χ are performed at a dedicated laboratory experiment. Under the vacuum conditions of ion sources, the incorporation of impurities into the Cs layer leads to very stable Cs compounds. The result is a minimal work function of χ_(vac) ≈ 2.75 eV for Cs evaporation rates of up to 10 mg/h independent of substrate material and surface temperature (up to 260 °C). Moreover, a distinct degradation behavior can be observed in the absence of a Cs flux onto the surface leading to a deterioration of the work function by about 0.1 eV/h. However, in a hydrogen discharge with plasma parameters close to those of ion sources, fluxes of reactive hydrogen species and VUV photons impact on the surface which reduces the work function of the caesiated substrate down to about 2.6 eV even without Cs supply. Establishing a Cs flux onto the surface with Γ_(Cs) ≈ 10~(17) m~(-2)s~(-1) further enhances the work function obtaining values around 2.1 eV, which can be maintained stable for several hours of plasma exposure. Hence, Cs layers with work functions close to that of pure bulk Cs can be achieved for both H_2 and D_2 plasmas. Isotopic differences can be neglected within the measurement accuracy of about 0.1 eV due to comparable plasma parameters. Furthermore, after shutting down the Cs evaporation, continuing plasma exposure helps against degradation of the Cs layer resulting in a constant low work function for at least 1 h.
机译:铯覆盖的表面用作负氢离子源,作为低功函数转换器,可用于H〜-/ D〜-表面的生产。转换器表面的功函数χ是决定离子源性能的关键参数之一。在理想条件下,纯本体Cs具有2.14 eV。然而,离子源背景压力为10〜(-7)-10〜(-6)mbar时的残留气体以及等离子体表面与钙化表面前面的氢放电的相互作用会动态影响实际的表面功函数。在专门的实验室实验中对所得的χ进行必要的基础研究。在离子源的真空条件下,将杂质掺入Cs层会导致非常稳定的Cs化合物。结果是最小的功函数为χ_(vac)≈2.75 eV,对于高达10 mg / h的Cs蒸发速率,与衬底材料和表面温度(高达260°C)无关。此外,在表面上不存在Cs助焊剂的情况下,可以观察到明显的降解行为,从而导致功函数降低约0.1 eV / h。然而,在等离子体参数接近于离子源的氢放电中,活性氢物质和VUV光子的通量撞击表面,即使没有Cs供给,被钙化的衬底的功函也降低到约2.6 eV。在Γ_(Cs)≈10〜(17)m〜(-2)s〜(-1)的表面上建立Cs通量进一步提高了功函数,获得了2.1 eV左右的值,可以在几个小时内保持稳定血浆暴露。因此,对于H_2和D_2等离子体,都可以实现功函数接近纯Cs的Cs层。由于可比较的血浆参数,在约0.1 eV的测量精度范围内可以忽略同位素差异。此外,在关闭Cs蒸发后,持续的等离子体暴露有助于防止Cs层降解,从而导致至少1小时的恒定低功函数。

著录项

  • 来源
    《Journal of Applied Physics 》 |2017年第8期| 083304.1-083304.7| 共7页
  • 作者

    Friedl Roland; Fantz Ursel;

  • 作者单位

    AG Experimentelle Plasmaphysik, Universität Augsburg, Augsburg, Germany;

    AG Experimentelle Plasmaphysik, Universität Augsburg, Augsburg, Germany,Max-Planck-Institut für Plasmaphysik, Boltzmannstr. 2, Garching, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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