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首页> 外文期刊>Journal of Applied Physics >Broadband planar multilayered absorbers tuned by VO_2 phase transition
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Broadband planar multilayered absorbers tuned by VO_2 phase transition

机译:通过VO_2相变调谐的宽带平面多层吸收体

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摘要

The metal-insulator transition makes vanadium dioxide an attractive material for developing recon-figurable optoelectronic components. Here we report on dynamically tunable broadband absorbers consisting of planar multilayered thin films. By thermally triggering the phase transition of vanadium dioxide, the effective impedance of multilayered structures is tuned in or out of the condition of impedance matching to free-space, leading to switchable broadband absorptions. Two types of absorbers are designed and demonstrated by using either the insulating or metallic state of vanadium dioxide at the impedance matched condition. The planar multilayered absorbers exhibit tunable absorption bands over the wavelength ranges of 5-9.3 and 3.9-8.2 μm, respectively. A large modulation depth up to 88% is measured. The demonstrated broadband absorbance tunability is of potential interest for reconfigurable bolometric sensing, camouflaging, and modulation of mid-infrared lights.
机译:金属-绝缘体的转变使二氧化钒成为开发可重构光电组件的诱人材料。在这里,我们报告由平面多层薄膜组成的动态可调宽带吸收器。通过热触发二氧化钒的相变,可以将多层结构的有效阻抗调整为与自由空间匹配的阻抗状态,从而可切换宽带吸收。通过在阻抗匹配条件下使用二氧化钒的绝缘或金属状态,设计并演示了两种类型的吸收器。平面多层吸收体分别在5-9.3和3.9-8.2μm的波长范围内表现出可调的吸收带。可以测量高达88%的大调制深度。所展示的宽带吸收率可调性对于可重新配置的辐射热感测,伪装和中红外光调制具有潜在的意义。

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  • 来源
    《Journal of Applied Physics 》 |2017年第5期| 053106.1-053106.9| 共9页
  • 作者单位

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China,School of Engineering, Brown University, Providence, Rhode Island 02912, USA;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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