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Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

机译:使用平面分层薄膜的基于VO2相变的强度可调红外宽带吸收器

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摘要

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing.
机译:基于等离子和超材料的纳米/微结构材料可实现光谱选择性共振吸收,其中共振带宽和吸收强度可通过控制纳米结构的尺寸和几何形状进行设计。在这里,我们展示了一种简单,无需光刻的方法,即可获得基于二氧化钒(VO2)相变的谐振且动态可调的宽带吸收器。使用平面分层的薄膜结构,其中顶层被选择为超薄(20 nm)VO2膜,我们展示了在整个中波长红外范围内的宽带IR光吸收调谐(测量吸收率从〜90%到〜30%)光谱。我们的数值和实验结果表明,吸收带的带宽可以通过改变介电间隔层的厚度来控制。宽带可调谐吸收器可用于吸收滤波器,热发射器,热光电和传感领域。

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