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Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

机译:教程:无功大功率脉冲磁控溅射(R-HiPIMS)

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摘要

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become "poisoned," i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.
机译:高功率脉冲磁控溅射(HiPIMS)是一种结合了磁控溅射和脉冲功率概念的涂层技术。通过在高振幅和较低占空比的脉冲中施加功率,大部分溅射原子和接近目标的气体被电离。与常规磁控溅射相比,HiPIMS的特点是分别对高和低溅射产率的材料以及大多数中间材料都进行自溅射或重复气体再循环。靶材前方的密集等离子体具有双重作用:维持放电并为膜生长提供等离子体辅助,从而影响生长膜的微观结构。许多技术上有趣的薄膜是复合膜,它由一种或多种金属和一种反应性气体(通常是氧气或氮气)组成。当添加反应性气体时,由于靶可能被“毒化”,即对靶表面形成化合物层,从而影响溅射产率和二次电子发射的产率,从而影响所有其他参数,因此对系统产生不小的后果。要强调的是,目标状态不仅取决于反应气体的分压(通过气流和泵送达到平衡),而且还取决于通向目标的离子通量,可以通过脉冲参数来控制离子通量。对于反应性HiPIMS(R-HiPIMS),这是关键的技术机遇。本教程的重点是等离子体工艺和操作机理,仅简要介绍膜的性质。它通过覆盖溅射,磁控溅射,反应性磁控溅射,脉冲反应性磁控溅射,HiPIMS以及最终的R-HiPIMS,以系统的,逐步的方法介绍了R-HiPIMS。通过考虑R-HiPIMS(称为调制脉冲功率磁控管溅射和深振荡磁控管溅射)的变体以及R-HiPIMS与叠加直流磁控管溅射的组合来结束本教程。

著录项

  • 来源
    《Journal of Applied Physics 》 |2017年第17期| 171101.1-171101.34| 共34页
  • 作者

    Andre Anders;

  • 作者单位

    Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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