Anisotropic in-plane spin dynamics in (110)-oriented GaAs/AIGaAs multiple quantum well

摘要

We studied spin dephasing processes in GaAs/AIGaAs multiple quantum wells (MQWs) grown on a semi-insulating (110)-oriented GaAs substrate using the time-resolved Kerr rotation (TRKR) technique. The TRKR spectra gives the electron g-factor in MQWs, as well as the spin dephasing time (SDT) for electron spins within the sample plane. The electron g-factor shows a strong two-fold anisotropy, while the in-plane SDT remains almost isotropic. The anisotropy of the electron g-factor increases monotonically with the spread of more electron wave functions into the AlGaAs barrier. The two-fold symmetry of the electron g-factor is discussed with a phenomenological model based on spin splitting of energy bands caused by spin-orbit coupling.