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首页> 外文期刊>Journal of Applied Physics >Suppression of anomalous Hall effect by heavy-fermion in epitaxial antiperovskite Mn_(4-x)Gd_xN films
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Suppression of anomalous Hall effect by heavy-fermion in epitaxial antiperovskite Mn_(4-x)Gd_xN films

机译:外生抗钙钛矿Mn_(4-x)Gd_xN薄膜中重铁离子抑制异常霍尔效应

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摘要

Mn4-xGdxN films with x ranging from 0 to 0.48 have been grown by a plasma-assisted molecular beam epitaxy (PA-MBE) system. Analyses show that there is a competition between Kondo coupling and the Ruderman-Kittel-Kasuya-Yosida interaction in these films. The anomalous Hall effect (AHE) was investigated, and a multiple competing scattering mechanism was used to differentiate different contributions to the AHE. Fitting results using a multivariable scaling relation show that contribution of the skew-scattering mechanism to the AHE is suppressed and competition between different contributions is stronger in highly doped samples than that in undoped samples. Resistivity-temperature (rho-T) curves in Gd-rich samples exhibit a typical behavior of heavy fermion (HF) materials. It shows a weak metal conducting behavior in a high temperature range, while Kondo coupling dominates the middle temperature range of 50 K-110 K. With a further decrease in the temperature to 5 K, a Fermi-liquid behavior is found in the range of 5 K-20 K. Comprehensive analyses indicate that Mn4-xGdxN with large x might be a new kind of HF material with room temperature ferromagnetism. Published by AIP Publishing.
机译:x的范围从0到0.48的Mn4-xGdxN膜已通过等离子体辅助分子束外延(PA-MBE)系统生长。分析表明,在这些电影中,近藤耦合与Ruderman-Kittel-Kasuya-Yosida相互作用之间存在竞争。研究了异常霍尔效应(AHE),并使用多重竞争散射机制来区分对AHE的不同贡献。使用多变量比例关系的拟合结果表明,偏散射机制对AHE的贡献得到了抑制,高掺杂样品中的贡献之间的竞争比未掺杂样品中的竞争更强。富含Gd的样品中的电阻率-温度(rho-T)曲线表现出重金属离子(HF)材料的典型行为。在高温范围内,它表现出较弱的金属导电性能,而近藤耦合器在50 K-110 K的中间温度范围内起着主导作用。随着温度进一步降低至5 K,发现费米-液体行为在90 K范围内。 5 K-20K。综合分析表明,x较大的Mn4-xGdxN可能是一种具有室温铁磁性的新型HF材料。由AIP Publishing发布。

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  • 来源
    《Journal of Applied Physics》 |2018年第9期|093903.1-093903.6|共6页
  • 作者单位

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Zhongkai Univ Agr & Engn, Automat Coll, Guangzhou 510225, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Phys & Astron, Zhuhai Campus, Zhuhai 519082, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Mat Sci & Engn, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

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