Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions

摘要

Two-dimensional materials enable novel electronic and optoelectronic devices due to their unique properties. Device modeling plays a fundamental role in developing these novel devices by providing insights into the underlying physics. In this work, we present the dramatic impact of the simulated out-of-plane dielectric thickness on the electrostatics of lateral junctions formed from atomically thin materials. We show that unlike bulk junctions, the boundary conditions on the edges of the simulation region significantly affect the electrostatics of two-dimensional (2D) lateral junctions by modifying the out-of-plane electric field. We also present an intuitive understanding of the Neumann boundary conditions imposed on the boundaries of the simulation region. The Neumann boundary conditions alter the intended simulation by generating reflections of the device across the boundaries. Finally, we derive a minimal dielectric thickness for a symmetrically doped 2D lateral p-n junction, above which the out-of-plane simulation region boundaries minimally affect the simulated electric field, electrostatic potential, and depletion width of the junction. Published by AIP Publishing.