...
机译:GaN纳米线侧面上的自组装InN量子点
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Ctr Anal & Synth nCHREM, Box 124, S-22100 Lund, Sweden;
Univ Copenhagen, Niels Bohr Inst, Univ Pk 5, DK-2100 Copenhagen, Denmark;
Lund Univ, Dept Phys, Div Synchrotron Radiat Res & NanoLund, Box 118, S-22100 Lund, Sweden;
Lund Univ, Dept Phys, Div Synchrotron Radiat Res & NanoLund, Box 118, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Ctr Anal & Synth nCHREM, Box 124, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Ctr Anal & Synth nCHREM, Box 124, S-22100 Lund, Sweden;
Lund Univ, Dept Phys, Div Synchrotron Radiat Res & NanoLund, Box 118, S-22100 Lund, Sweden;
Univ Copenhagen, Niels Bohr Inst, Univ Pk 5, DK-2100 Copenhagen, Denmark;
Lund Univ, Dept Phys, Div Synchrotron Radiat Res & NanoLund, Box 118, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
Lund Univ, Div Solid State Phys & NanoLund, Dept Phys, Box 118, S-22100 Lund, Sweden;
机译:在Stranski-Krastanow模式下通过等离子体辅助分子束外延在AlN / Si(111)和GaN / Al_2O_3(0001)上生长的自组装InN量子点
机译:纤锌矿GaN / InN / GaN纳米线量子盘LED结构中的非线性压电有多重要?
机译:GaN封盖厚度对InN / GaN量子点的应变和光致发光特性的影响
机译:通过斯特拉斯基 - 克拉车模式下等离子体辅助分子束外延在AlN / Si(111)和GaN / Al2O3(0001)上生长的自组装入线量子点
机译:使用室温共振拉曼散射探测碲化镉自组装量子点和硫化镉纳米线中的电子和振动态。
机译:GaN上InN量子点的应力释放分析
机译:在极性和非极性Wurtzite Inn / GaN量子点之间的库仑相互作用与量子狭窄效果的相互作用