机译:高In含量的InGaN纳米金字塔:通过优化GaN晶种成核来调整晶体均匀性
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
Center for Analysis and SynthesisCHREM, Lund University, Box 124, S-221 00 Lund, Sweden;
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
Center for Analysis and SynthesisCHREM, Lund University, Box 124, S-221 00 Lund, Sweden;
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
机译:InGaN / GaN纳米金字塔阵列中的双重超结构
机译:在通过纳米压印形成的紧密间隔的GaN纳米金字塔的晶面上生长的InGaN量子阱的发光
机译:在块状GaN晶体上生长的压力调谐蓝紫色InGaN / GaN激光二极管
机译:低效率下垂绿色纳米金字塔{101̄1} InGaN / GaN多量子阱LED
机译:从铝酸钠的种子超饱和溶液中分批结晶三水合氧化铝;具有速率过程增长,成核和聚集的批处理系统中的人口密度种群平衡。
机译:具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管
机译:在块状GaN晶体上生长的InGaN / GaN双异质结构激光二极管结构中的定位效应。