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Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals.

机译：在块状GaN晶体上生长的InGaN / GaN双异质结构激光二极管结构中的定位效应。

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Czernecki Robert; Franssen G.; Suski Tadeusz; Swietlik T.; Borysiuk J.; Grzanka S.; Lefebvre Pierre; Leszczinski M; Perlin Piotr; Grzegory Izabella; Porowski Sylvester;
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年度 2005
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1. Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals [J] . R. CZERNECKI, G. FRANSSEN, T. SUSKI, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第10期

机译：块状GaN晶体上生长的InGaN / GaN双异质结构激光二极管结构中的局部化效应
2. A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal [J] . T. Suski, G. Franssen, P. Perlin, Applied Physics Letters . 2004,第8期

机译：在块状GaN晶体上生长的压力调谐蓝紫色InGaN / GaN激光二极管
3. Enhanced Luminescence Efficiency Due To Carrier Localization In Ingan/gan Heterostructures Grown On Nanoporous Gan Templates [J] . C. B. Soh, S. Y. Chow, L. Y. Tan, Applied Physicsletters . 2008,第17期

机译：由于在纳米多孔Gan模板上生长的Ingan / gan异质结构中的载流子定位，增强了发光效率。
4. InGaN/GaN QUANTUM WELL HETEROSTRUCTURES GROWN ON SILICON FOR UV-BLUE LASERS AND LIGHT EMITTING DIODES [C] . G. P. YABLONSKII, E. V. LUTSENKO, A. L. GURSKII, Reviews and Short Notes to Nanomeeting 2003 on Physics, Chemistry and Application of Nanostructures May 20-23, 2003 Minsk, Belarus . 2003

机译：硅上生长的InGaN / GaN量子阱异质结构，用于紫外蓝光激光器和发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si [O] . Yi Sun, Kun Zhou, Meixin Feng, 2018

机译：直接在Si上生长的室温连续波电泵浦InGaN / GaN量子阱蓝色激光二极管
7. Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals. [O] . Czernecki Robert, Franssen G., Suski Tadeusz, 2005

机译：在块状GaN晶体上生长的InGaN / GaN双异质结构激光二极管结构中的定位效应。
8. Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep UV (<250 nm) Emission (Year 2). [R] . Reed, M., Readinger, E. D. 2011

机译：利用氮化铟镓（InGaN）/氮化镓（GaN）异质结构的负极化特性实现具有深紫外（<250nm）发射的频率倍增蓝绿激光（2年级）。

Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals.

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