SILICON FILM DEPOSITION USING A GAS-JET PLASMA-CHEMICAL METHOD: EXPERIMENT AND GAS-DYNAMIC SIMULATION

摘要

This paper presents the results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasmachemical method. A numerical model of gas mixtures flowing out of an annular nozzle unit and into a reactor is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and satisfactorily describes the experimental data obtained.