Gadolinium Doped Europium Sulfide

摘要

We have prepared gadolinium doped europium sulfides, Eu_1−xGd_xS for a doping range of 0 ≤ x ≤ 0.1 by thermal decomposition of the precursors Eu(S₂CNEt₂)₃Phen/Gd(S₂CNEt₂)₃Phen with respective ratios. Electron doping provides indirect evidence for the magnetic coupling through carrier electrons in magnetic semiconductors. Based on the magnetic properties, we determined that the paramagnetic Curie temperature, Θp, varies with doping level, in a similar way to Eu_1−xGd_xO exhibiting a significant increase at low doping levels. All materials have been characterized by X-ray powder diffraction, magnetic measurements, ICP-MS, and TEM.