Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO_3/SiO_2/Si Substrates

摘要

The heating behavior of LaNiO_3 (LNO) films on SiO_2/Si substrate heated by 2.45 GHz microwave irradiation in the microwave magnetic field was first investigated, and then amorphous Pb(Zr_(0.25)Ti(0.48))O_3 (PZT) thin films were deposited on LNO-coated SiO_2/Si substrates by a sol-gel method and crystallized in the microwave magnetic field. The crystalline phases and microstructures as well as the electrical properties of the PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT films with a highly (100)-preferred orientation can be obtained by microwave annealing at 700℃ for only 180 s of total processing time, and have good electrical properties. The results demonstrated that conductive metal oxide LNO as a bottom electrode layer is an advantage for the crystallization of PZT thin films by microwave irradiation in the microwave magnetic field.