InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO_2 as gate dielectric

摘要

In this letter, we present the electrical properties of the InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO2 as the gate dielectric. The InAlN/GaN MISHEMT with an on/off current (I-on/I-off) ratio of 1.46 x 10(9) as well as a subthreshold swing of 85 mV/dec was achieved. The interface trap density (D-it) decreased from 1.16 x 10(12) eV(-1) cm(-2) (at E-C - E-T = 0.26 eV) to 4.68 x 10(11) eV(-1 )cm(-2) (at E-C - E-T = 0.40 eV), indicating a good interface property. This study suggests a feasible way for the application of ZrO2/InAlN/GaN MISHEMTs.