Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

摘要

In order to advance the mass production of graphene devices, it is beneficial to avoid the difficulty graphene transfer process. Direct precipitation of graphene using a tungsten capping layer is convenient for this purpose, and is quite simple and compatible with conventional semiconductor fabrication processes. In this study, multilayer graphene was directly precipitated on a wafer of GaN-based blue LEDs to form a transparent electrode. The fabricated LED exhibited superior I-V characteristics and emitted blue luminescence around the probe of the electrode. (C) 2019 The Japan Society of Applied Physics