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机译:利用电容电压测量精确确定c面GaN / Al_xGa_(1-x)N / GaN异质结构中的极化场
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Opt & Atom Phys, Hardenbergstr 36, Berlin, Germany;
KAUST, Adv Semicond Lab, Thuwal 23955, Saudi Arabia;
KAUST, Adv Semicond Lab, Thuwal 23955, Saudi Arabia;
Univ Kassel, Computat Elect & Photon Grp, Kassel, Germany|CINSaT, Kassel, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Opt & Atom Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Opt & Atom Phys, Hardenbergstr 36, Berlin, Germany;
Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany;
机译:精确地确定具有电容 - 电压 - 测量的C平面GaN / AL_XGA_(1-X)N / GaN异质结构中的偏振场
机译:准确测定(0001)C面中的偏振场,电容电压测量的C面Inaln / GaN异质结构
机译:极化诱导的二维电子气在Al_xGa_(1-x)N / AlN / GaN异质结构中的弱反定位和零场电子自旋分裂
机译:偏振掺杂Al_XGA_(1-X)N / GaN异质结构的弱脱氯化
机译:通过发光光谱和X射线衍射测定在6H-SiC(0001)衬底上生长的GaN和Al(x)Ga(1-x)N薄膜的应变和组成。
机译:MOCVD生长的全应变c平面InGaN /(In)GaN多量子阱中极化场强度的降低
机译:MOCVD生长的全应变c平面InGaN /(In)GaN多量子阱中极化场强度的降低
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管