Annihilation mechanism of V-shaped pits in c-GaN grown by hydride vapor-phase epitaxy

摘要

An evident issue in performing GaN growth along the c-direction is the generation of V-shaped pits on its surface. Here, we investigated the transition of the angle of facets forming a V-shaped pit via three-photon excitation photoluminescence (3PPL). The intermittent doping of Ge was introduced to GaN growth to observe the growth front. The size of the V-shaped pit composed of {1012} facets decreased along the growth direction, whereas that composed of {1011} facets, increased. Furthermore, planar growths of c-GaN and semipolar GaN having various surface orientations revealed that the V-shaped pit composed of {1012} was likely to annihilate rather than that of {1011} under the growth condition of N-2 carrier gas, which coincides with the result of 3PPL. (C) 2019 The Japan Society of Applied Physics