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首页> 外文期刊>Japanese journal of applied physics >Fabrication of Cu_2ZnSn(S,Se)_4 thin-film solar cells by sulfurization using Cu_2ZnSnSe_4 and KF compounds
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Fabrication of Cu_2ZnSn(S,Se)_4 thin-film solar cells by sulfurization using Cu_2ZnSnSe_4 and KF compounds

机译:使用Cu_2ZnSnSe_4和KF化合物硫化制备Cu_2ZnSn(S,Se)_4薄膜太阳能电池

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摘要

Cu2ZnSn(S,Se)(4) thin films were fabricated by sulfurization of the precursor evaporated from Cu2ZnSnSe4 and KF compounds. From Raman analysis, the precursor had a Cu2SnSe3 structure and transformed to Cu2ZnSn(S,Se)(4) structure after sulfurization, which was the first approach to produce Cu2ZnSn(S,Se)(4) thin films. Electron probe microanalysis revealed that the S/(Se - S) mole ratios in the sulfurized films were in the range between 0.94 and 0.99. The open circuit voltage V-oc of Cu2ZnSn(S,Se)(4) thin-film solar cells fabricated using KF improved more than that of the solar cell fabricated without KF, especially the best solar cell demonstrated with V-oc = 698 mV. (C) 2019 The Japan Society of Applied Physics
机译:通过硫化从Cu2ZnSnSe4和KF化合物蒸发的前驱体制备Cu2ZnSn(S,Se)(4)薄膜。根据拉曼分析,前驱体具有Cu2SnSe3结构,并且在硫化后转变为Cu2ZnSn(S,Se)(4)结构,这是生产Cu2ZnSn(S,Se)(4)薄膜的第一种方法。电子探针显微分析表明,硫化膜中的S /(Se-S)摩尔比在0.94至0.99之间。使用KF制备的Cu2ZnSn(S,Se)(4)薄膜太阳能电池的开路电压V-oc比未使用KF制备的太阳能电池的开路电压V-oc改善得更多,尤其是在V-oc = 698 mV时表现出的最佳太阳能电池。 (C)2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sb期|SBBF03.1-SBBF03.5|共5页
  • 作者单位

    Wakayama Coll, Natl Inst Technol, 77 Noshima,Nada Cho, Gobo, Wakayama 6440023, Japan;

    Wakayama Coll, Natl Inst Technol, 77 Noshima,Nada Cho, Gobo, Wakayama 6440023, Japan;

    Wakayama Coll, Natl Inst Technol, 77 Noshima,Nada Cho, Gobo, Wakayama 6440023, Japan;

    Wakayama Coll, Natl Inst Technol, 77 Noshima,Nada Cho, Gobo, Wakayama 6440023, Japan;

    Nagaoka Coll, Natl Inst Technol, 888 Nishikatakai Machi, Nagaoka, Niigata 9408532, Japan;

    Nagaoka Coll, Natl Inst Technol, 888 Nishikatakai Machi, Nagaoka, Niigata 9408532, Japan;

    Toyohashi Univ Technol, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan;

    Toyohashi Univ Technol, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan;

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