Highly effective removal of OH bonds in low-temperature silicon oxide films by annealing with ammonia gas at a low temperature of 175℃

摘要

Compared with the conventional N-2 gas, annealing with ammonia (NH3) gas at a low temperature of 175 degrees C was very effective at removing OH bonds in silicon oxide films deposited by atmospheric chemical vapor deposition at temperatures of 200 T with silicon organic solution. Fourier transform infrared spectra of the annealed films on Si substrates showed that the reduction in the height of peaks due to OH bonding was 1.5 times greater with NH3 than with N-2. This effect can be explained by catalytic action of NH3 as a Lewis base. (C) 2019 The Japan Society of Applied Physics