Organic Field-Effect Transistor of (Thiophene/Phenylene) Co-Oligomer Single Crystals with Bottom-Contact Configuration

摘要

A novel and simple fabrication technique of organic field-effect transistors (FETs) of organic single crystals with bottom-contact configuration was proposed. The organic single crystal that was made by vapor phase growth was used as a FET semiconductor layer. The proposed fabrication process of the device is quite simple. That is, a single crystal is only placed on an electrode-prepared substrate. The devices exhibited good bottom-contact type FET characteristics, and the field-effect mobility reached 0.15 cm~2·V~(-1)·s~(-1) in the best device, which was higher than that of thin film transistors that were prepared by vacuum evaporation.