Epitaxial Growth of GaN on (1 0 0) β-Ga_2O_3 Substrates by Metalorganic Vapor Phase Epitaxy

摘要

Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated for the first time on β-Ga_2O_3 single crystal substrates, which are near-UV transparent and n-type conductive. High-quality (0 0 0 1) GaN epi-layer with a narrow bandedge luminescence was obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structure was also successfully grown. The first blue light-emitting diode (LED) on β-Ga_2O_3 with vertical current injection is demonstrated.