Amorphous Silicon Film Deposition from SiH_4 by Chemical Vapor Deposition with Argon Excimer Lamp

摘要

We have deposited amorphous silicon thin films from monosilane (SiH_4) gas by photochemical vapor deposition using a vacuum ultraviolet excimer lamp (VUV-CVD). We used an argon excimer lamp (λ = 126 nm, hv = 9.8 eV) whose photons are strongly absorbed by SiH_4 gas. The substrate temperatures were changed from 25 to 300℃. When the temperature was lower than 150℃, the films included H-Si-H units and H_2 molecules in its structure. When it was higher than 150℃, the main structural unit was Si-H.