Study of Long-Term-Retention Characteristics and Wall Behavior of Nano-Inverted Domains on Congruent Single-Crystal LiTaO_3 Based on Wall Energy

摘要

To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO_3 plates with inverted-domain dot arrays composed of 100-nm-φ dots were baked at 220, 250, 280, and 300℃. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (E_a) and frequency factor (α), parameters of the Arrhenius equation, were determined to be E_a = 0.76eV, α = 2.21 x 10~5. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.