Performance of Direct Tunneling Floating Gate Memory with Medium-κ Dielectrics for Embedded-Random-Access Memory Applications

摘要

We propose the use of medium-κ dielectrics for direct tunneling floating gate memory devices, targeting embedded-random-access memory (e-RAM) applications. We found that SiON offers best performance if voltage reduction overrules refresh time, while Hf-silicates would be preferred if the refresh time is more critical. Our analysis is based on a direct tunneling current model, a response surface methodology and experimental data on small metal-oxide-semiconductor field-effect transistors (MOSFET's). The impact of dielectric degradation during cycling is studied for scalability towards the 32 nm node.