Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix

摘要

We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by the thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si_(1-x)C_x) multilayers. Raman scattering spectroscopy and transmission electron microscopy (TEM) revealed that silicon quantum dots were formed in only a-Si_(1-x)C_x layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si_(1-x)C_x layers.