Location Control of Super Lateral Growth Grains in Excimer Laser Crystallization of Silicon Thin Films by Microlight Beam Seeding

摘要

The location of crystal grains in polycrystalline Si thin films under excimer laser crystallization is controlled. A local area of Si film was melted by a microlight beam with a diameter of less than 1 μm, and only one comparatively large grain was grown within the melt. Then, the film was remelted by uniform excimer laser light, and superlateral growth (SLG) was originated from the seed. As a result, location-controlled SLG grains with a diameter of 6 μm were formed.