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UNIFORM SEEDING TO CONTROL GRAIN AND DEFECT DENSITY OF CRYSTALLIZED SILICON FOR USE IN SUB-MICRON THIN FILM TRANSISTORS
UNIFORM SEEDING TO CONTROL GRAIN AND DEFECT DENSITY OF CRYSTALLIZED SILICON FOR USE IN SUB-MICRON THIN FILM TRANSISTORS
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机译:用于亚微米薄膜晶体管的均匀晶种控制晶硅和缺陷密度
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摘要
A method to create a polysilicon layer with large grains and uniform grain density is described. A first amorphous silicon layer is formed. A crystallizing agent is selectively introduced in a substantially symmetric pattern, preferably symmetric in two dimensions, across an area of the first amorphous layer. The crystallizing agent may be, for example, silicon nuclei, germanium, or laser energy. A mask layer is formed on the amorphous silicon layer, and holes etched in the mask layer in a symmetric pattern to expose the amorphous layer to, for example, silicon nuclei or germanium) only in the holes. The mask layer is removed and a second amorphous layer formed on the first. If laser energy is used, no mask layer or second amorphous layer is generally used. The wafer is annealed to form a polysilicon layer with substantially no amorphous silicon remaining between the grains.
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