Synthesis and Characterization of B_2O_3-Doped Zinc Oxide Thin Films Prepared via RF-Magnetron Sputtering

摘要

The effects of B_2O_3 addition on the crystal structure and morphological features of ZnO thin films prepared via RF-magnetron sputtering have been studied. Doping B_2O_3 into ZnO films resulted in a c-axis preferred orientation and facilitated the deposition process. The microstructures of the prepared films markedly varied with the amount of B_2O_3 doping and oxygen content during sputtering. The presence of B_2O_3 in the ZnO films played an important role in the transmission of light and resulted in enhanced transmission in the visible range. The band-gap energies of the B_2O_3-doped ZnO films significantly decreased as the B_2O_3 amount increased and the oxygen content decreased during sputtering.