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Morphology Control of Patterned Carbon Nanofiber Arrays for Field Emission Applications

机译:图案化碳纳米纤维阵列的场发射应用的形态控制

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Carbon nanofibers (CNFs), grown by dc plasma-enhanced chemical vapor deposition, have differences in morphology and resulting field emission properties depending on underlying buffer layers. We patterned 200-nm-sized Ni catalyst dots, with 2-5 μm spacing, by e-beam lithography and obtained regularly spaced vertically aligned CNF arrays. CNFs, grown on Ti-buffered Si substrates, showed a needle like shape with a high aspect ratio, but CNFs directly grown on Si substrates, had a cone like shape. The former showed a smaller turn-on field (11 V/μm) than the latter (27 V/μm), in field emission current measurements. Moreover, the maximum current density of the CNF array on Ti was as high as 10 A/cm~2.
机译:通过直流等离子体增强化学气相沉积法生长的碳纳米纤维(CNF),其形态和所产生的场发射特性存在差异,具体取决于底层的缓冲层。我们通过电子束光刻对200 nm大小的Ni催化剂点进行了图案化,间距为2-5μm,并获得了规则间隔的垂直排列CNF阵列。在Ti缓冲的Si衬底上生长的CNF呈现出高纵横比的针状形状,而直接在Si衬底上生长的CNF则呈圆锥形。在场发射电流测量中,前者的导通场(11 V /μm)比后者(27 V /μm)小。而且,Ti上的CNF阵列的最大电流密度高达10 A / cm〜2。

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