Interface Resistivity of Directly Bonded Si Wafers

摘要

To study the interface resistivity of bonded Si wafers, every combination of three kinds of Si wafers (1.86 x 10~(-2), 1.91 x 10~(-1), and 2.44 Ω cm in resistivity) was bonded by surface activation bonding. Thermal treatments up to 1100℃ were performed and the resistivities of bonded Si wafers were measured by a four-probe method. The interface resistivities were estimated with calculations based on a model of the composite resistivity of bonded Si wafers.