Planarization of Si Ridges in Sequential Lateral Solidification Process

摘要

The heights of ridges, which are formed after crystallizing amorphous Si films, vary linearly to the initial film thicknesses. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved thin-film transistor characteristics. Relevant parameters influencing the planarization process are discussed. The optimum energy for planarization corresponds to the energy at which ridge peak blunting is maximum.