首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas
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Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas

机译:带有缝隙天线的高度集成谐振隧穿二极管振荡器的相干功率组合

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We propose highly integrated array of resonant tunneling diode (RTD) oscillators and observed coherent power combination in this structure. Two InGaAs/AlAs RTD oscillators with slot antennas on the same InP wafer are arranged collinearly, and coupled with each other through a 5-u.m-long metal-insulator-metal stub structure. Although the individual oscillation frequencies were 329 and 332 GHz, a single peak at 321 GHz was observed when the two oscillators were driven simultaneously. The individual output powers were 1.9 and 2.6 μW, while 5.1 μW in simultaneous operation which was larger than the summation of individual output. These results are attributed to the mutual injection locking and coherent power combination resulting in the improvement of directivity in array antenna. From these experimental results, high-power and high-density RTD oscillators are expected by extending this structure to several elements.
机译:我们提出了谐振隧道二极管(RTD)振荡器的高度集成阵列,并在此结构中观察到相干功率组合。两个在同一InP晶片上带有缝隙天线的InGaAs / AlAs RTD振荡器共线排列,并通过5 µm长的金属-绝缘体-金属短线结构彼此耦合。尽管单个振荡频率分别为329和332 GHz,但当同时驱动两个振荡器时,在321 GHz处观察到一个峰值。单个输出功率分别为1.9和2.6μW,而同时运行时为5.1μW,大于单个输出的总和。这些结果归因于相互注入锁定和相干功率的组合,从而改善了阵列天线的方向性。从这些实验结果来看,通过将这种结构扩展到几个元件,可以期望得到高功率和高密度的RTD振荡器。

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