Threshold Voltage Control of Hf-based High-κ Gate Stack System by Fluorine Incorporation into Channel and Its Impact on Short-Channel Characteristics

摘要

A threshold voltage lowering of up to 400 mV in HfSiON/polycrystalline silicon (poly-Si) gate stack p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) by fluorine incorporation into the channel is observed. Physical analysis verifies that implanted fluorine exists only in the channel region. The characteristics of the short-channel devices are investigated in detail, and an acceptor generation model by fluorine implantation is proposed. The model successfully explains the characteristics of fluorine-incorporated short-channel pMOSFETs.