C-Band GaN-Based Field-Effect-Transistor Power Amplifiers with 170-W Output Power

摘要

A C-band high-power amplifier is successfully developed with two-chip 24-mm-wide GaN-based field effect transistors (FET). At 5.0 GHz, the fabricated GaN-FET amplifier delivers a 171 W cw output power with 11 dB linear gain and 38% power-added efficiency with a drain voltage of 50 V. To the best of our knowledge, this is the highest cw output power achieved from a solid-state power amplifier at C-band.