Structural Properties of ZnTe Epilayers Grown on (0001) α-Al_2O_3 Substrates by Metalorganic Vapor Phase Epitaxy

摘要

ZnTe layers have been grown on (0001) sapphire (α-Al_2O_3) substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. The structural properties of the ZnTe layers are investigated by X-ray diffraction and reflection high-energy electron diffraction analyses. It is revealed that (111) ZnTe single-crystalline layers can be obtained on (0001) α-Al_2O_3 substrates at a substrate temperature above 410 ℃. The X-ray rocking curve measurements confirm that the crystalline quality of the ZnTe layers depends strongly on the substrate temperature, and the best crystalline quality ZnTe layer is obtained at a substrate temperature of 430℃.