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X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

机译：X射线测定金属机气相外延生长的GaN / Al2O3（0001）膜中穿线脱位密度

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Viktor S. Kopp; Vladimir M. Kaganer; Marina V. Baidakova; Wsevolod V. Lundin; Andrey E. Nikolaev; Elena V. Verkhovtceva; Maria A. Yagovkina; Nikolay Cherkashin;
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1. X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy [J] . Journal of Applied Physics . 2014,第7期

机译：X射线测定金属有机气相外延生长的GaN / Al2O3（0001）薄膜中的位错密度
2. X-ray determination of threading dislocation densities in GaN/Al_2O_3(0001) films grown by metalorganic vapor phase epitaxy [J] . Viktor S. Kopp, Vladimir M. Kaganer, Marina V. Baidakova, Journal of Applied Physics . 2014,第7期

机译：X射线测定金属有机气相外延生长的GaN / Al_2O_3（0001）薄膜中的位错密度
3. Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition [J] . X. WENG, J.D. ACORD, A. JAIN, Journal of Electronic Materials . 2007,第4期

机译：金属有机化学气相沉积在（111）Si衬底上生长的GaN膜中的螺纹位错密度和应力的演变
4. Surface Instability and Associated Roughness of Pendeo-epitaxy GaN (0001) Films Grown via Metalorganic Vapor Phase Epitaxy [C] . Amy M. Roskowski, Peter Q. Miraglia, Edward A. Preble, Symposium on GaN and Related Alloys―2001, Nov 26-30, 2001, Boston, Massachusetts, U.S.A. . 2001

机译：通过金属有机气相外延生长的Pendeo-外延GaN（0001）膜的表面不稳定性和相关的粗糙度
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

机译：有机金属气相外延过程中GaN（0001）和（000-1）的CH4吸附概率及其与膜中碳污染的关系
7. In-plane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy [O] . Darakchieva V., Paskov P.P., Paskova T., 2004

机译：金属有机汽相外延生长在a面蓝宝石上的GaN薄膜的面内应变各向异性和晶格参数

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

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