Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove

摘要

The monolithic integration of a distributed reflector (DR) laser with a front power monitor was realized for the first time, where quantum wirelike active regions were used to obtain the partial absorption necessary for monitoring the photodetector. The electrical isolation between the laser and power monitor sections was realized by deep (3.8 μm) and narrow (500 nm) groove etching, and a moderately high optical transmittivity of about 95% and a very high isolation resistance of 60 MΩ were achieved.