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首页> 外文期刊>Japanese journal of applied physics >Crystal Structure And Electrical Properties Of {100}-oriented Epitaxial Bicoo_3-bifeo_3 Films Grown By Metalorganic Chemical Vapor Deposition
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Crystal Structure And Electrical Properties Of {100}-oriented Epitaxial Bicoo_3-bifeo_3 Films Grown By Metalorganic Chemical Vapor Deposition

机译:金属有机化学气相沉积法制备{100}取向外延Bicoo_3-bifeo_3薄膜的晶体结构和电性能

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摘要

xBiCoO_3-(1 - x)BiFeO_3 (x = 0-0.22) films of 400 nm thickness were grown on (100)_c SrRuO_3 ‖ (100) SrTiO_3 substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with x were investigated. The constituent phase changed from rhombohedral to a mixture of rhombohedral and tetragonal, and to tetragonal with increasing x, but the x for this transition is different from that of 200-nm-thick films grown on (100) SrTiO_3 substrates. The x of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing x, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O_3 epitaxial films owing to the decrease in the crystal anisotropy of the films.
机译:通过金属有机化学气相沉积法在(100)_c SrRuO_3-(100)SrTiO_3衬底上生长了厚度为400 nm的xBiCoO_3-(1-x)BiFeO_3(x = 0-0.22)膜。研究了x引起的薄膜的晶体结构和电性能的变化。随着x的增加,组成相从菱面体变为菱面体和四方体的混合物,并变为四方体,但是此过渡的x与在(100)SrTiO_3衬底上生长的200 nm厚膜的相不同。由四方和菱面体对称的混合物组成的相变相边界的x取决于薄膜厚度。剩余极化率随着x的增加而连续降低,这与{100}取向的Pb(Zr,Ti)O_3外延膜获得的结果非常吻合,这是由于膜的晶体各向异性的降低。

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