Algaas/ingaas High Electron Mobility Transistor Grown On Si Substrate With Ge/ge_xsi_(1-x) Metamorphic Buffer Layers

摘要

Al_(0.12)Ga_(0.88)As/In_(0.18)Ga_(0.82)As high-electron-mobility transistor (HEMT) growth on a Si substrate using the Ge/Ge_xSi_(1-x) buffer is demonstrated. This is the first demonstration of Al_(0.12)Ga_(0.88)As/In_(0.18)Ga_(0.82)As HEMT growth on a Ge/Ge_xSi_(1-x) metamorphic buffer layer. The electron mobility in the In_(0.18)Ga_(0.82)As channel of the HEMT sample was 3,550 cm~2/(V·s). After fabrication, the HEMT device demonstrated a saturation current of 150 mA/mm with a transconductance of 155 mS/ mm. The well behaved characteristics of the HEMT device on the Si substrate are believed to be due to the very thin buffer layer achieved and the lack of the antiphase boundary (APB) formation and Ge diffusion into the GaAs layers.