Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides

摘要

We have developed a model of the stress-induced leakage current (SILC) based on the inelastic trap-assisted tunneling (ITAT) by introducing a trap with a deep(energy level of 3.6 eV from the bottom of the conduction band. This model can explain both of two field dependencies, i.e., a field dependence of the direct tunneling (DT) for A-mode SILC and that of the Fowler-Nordheim (FN) tunneling for B-mode SILC by analytical equations of a common form. For simple analytical equations, we introduce the most favorable trap position (MFTP), which gives the largest contribution to the leakage current. The trap area density for A-mode SILC of around 1 × 10~(10) cm~(-2) and the area density of the leakage paths for B-mode SILC of 1 × 10~2 cm~(-2) were obtained by comparisons between the experimental results and the present model.