Enhancement of Light Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by Titanium Dioxide Texturing

摘要

The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO_2) textured film has been observed. The output power values of conventional and TiO_2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO_2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO_2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-output-power InGaN/GaN MQW LED has been obtained by coating with a TiO_2 textured film.